Varistor-type, nanostructured semiconductor device made of conducting polymer, zinc oxide and metals

Abstract

The present invention relates to a semiconducting nanodevice comprising a heterojunction made of a conducting polymer (PANI) and zinc oxide (ZnO). Electronic devices having specific electric characteristics can be obtained by controlling the doping properties, the degree of oxidation of the conducting polymer and the physical dimensions of the zinc oxide films. This technology can be used to produce a semiconducting p-n junction having with rectifier diode characteristics, as well as a varistor-type device with controlled breakdown voltages, and having unprecedented features for which protection is sought. The device comprises a metallic film made of either gold or aluminium, a thin polyaniline film of various thicknesses and sizes, a zinc oxide film of various thickness and sizes, and finally metallic contacts made of aluminium or gold as depicted in figure 1. The electric characteristics of these new devices are improved over those of commercially available devices, since they constitute organic hybrid devices which are cheaper and easier to produce. Another important aspect is the possibility to control the breakdown voltage of the device by varying the degree of doping and the thickness of the active components.